SSRM characterisation of FIB induced damage in silicon
نویسندگان
چکیده
Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10 cm to 2⋅10 cm. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2⋅10 cm to 4⋅10 cm, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.
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